Publications List
| Date | Type and title | audience | countries addressed | size of audience | partners involved | link |
|
01.02.2007 |
Seminar in IAF Fraunhofer Freiburg : Recent developments on antimonide-based VCSELs and other photonic devices by University Montpellier 2. F. Genty (UM2) |
Research |
Germany |
50 |
UM2 |
|
|
01.03.2007 |
Conference Contribution: 14th European MBE Workshop 2007, Granada / Spain, Growth and Fabrication of electrically pumped GaSb-VCSELs, Talk by O. Dier, C. Lauer, T. Huesgen, A. Bachmann, M.-C. Amann |
Research, Industry (electronics & opto devices) |
Europe |
n.a. |
WSI |
|
|
01.03.2007 |
Seminar: E. Hulicius, Semiconductor materials and devices for Midinfrared wavelength region of radiation, J. Heyrovsky Inst. of Phys. Chem., Invited lecture at all Institute seminary, March 9th |
General public |
Czech republic |
30 |
IOP |
|
|
27.04.2007 |
Seminar in IAF Fraunhofer Freiburg: Laser diodes for the mid-infrared, talk by M.-C. Amann |
Research |
World |
50 |
WSI |
|
|
14.05.2007 |
Conference Contribution: 8th Int. Conf. on Mid Infrared Optoelectronics Materials and Devices, Bad Ischl (Austria), Mid-Infrared Vertical-Cavity Surface-Emitting Lasers, Proceedings of MIOMD VIII, p. 60, Bad Ischl / Austria, Contribution by C. Lauer, O. D |
Research, Industry (electronics & opto devices) |
World |
300 |
WSI |
|
|
14.05.2007 |
Conference Contribution: 8th Int. Conf. on Mid Infrared Optoelectronics Materials and Devices, Bad Ischl (Austria) : Poster by Genty (UM2). |
Research, Industry (electronics & opto devices) |
World |
300 |
UM2 |
|
|
01.06.2007 |
Conference Contribution: 8th Int. Conf. on Mid Infrared Optoelectronics Materials and Devices, Bad Ischl, Austria, June 3rd 6th, 2007, Proc p. 184-5 E. Hulicius A. Hospodkov, J. Pangrac, K. Melichar, T. Simecek, K.D. Moiseev, E.V. Ivanov, M.P. Mikhailova, |
Research, Industry (electronics & opto devices) |
World |
300 |
IOP |
|
|
01.07.2007 |
Seminar in UM2 : High coherent semiconductor photonic sources: design, fabrication, characterization. A. Garnache/M.Myara (UM2). |
Research, students |
France |
50 |
UM2 |
|
|
09.07.2007 |
Seminar in UM2 : 1St year phD results (CST) on development of new GaSb-based EP-VCSELs structures. A. Ducanchez (UM2) |
Research, students |
France |
50 |
UM2 |
|
|
18.07.2007 |
Conference Poster: Tunable Diode Laser Spectroscopy Conference 2007, Reims, France, Straightforward modeling of the n-th harmonic signals used in wavelength modulation spectroscopy and their mathematical properties, poster by A.Hangauer, J. Chen, M.-C. Am |
Research, Industry (electronics & opto devices) |
France |
n.a. |
SAG, WSI |
|
|
01.08.2007 |
Internship: UM2 Master 1 internship: Fabrication and characterization on Sb-based mid IR RC-LEDs devices. Report and oral presentation by U. Erbakan (UM2). |
Research, students |
France |
n.a. |
UM2 |
|
|
01.08.2007 |
Conference contribution: ICCG-15, Negative electroluminescence in type II p-InAs/AlSb/InAsSb/AlSb/ p-GaSb asymmetric heterostructure, E. Hulicius1, J. Pangrác1, A. Hospodková1, K. Melichar1, T. Šimeček1, K.D. Moiseev2, E.V. Ivanov2, M.P. Mikhailova2, Yu.P |
Research |
World |
120 |
IOP |
|
|
08.08.2007 |
Conference: International Nano-Optoelectronic Workshop (iNOW) 2007, Lanzhou, China, Long Wavelength VCSELs for Sensing Applications, invited talk by M.-C. Amann |
Research |
World |
100 |
WSI |
|
|
01.09.2007 |
Project website: www.wsi.tum.de/e26/nemis |
All |
World |
n.a. |
WSI/all |
|
|
01.09.2007 |
Regular Article: AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm, A. Perona, A. Garnache, L. Cerutti, A. Ducanchez, S. Mihindou, P. Grech, G. Boissier and F. Genty, Semicond. Sci. Technol. 22 (2007) 114 |
Research |
World |
n.a. |
UM2 |
|
|
01.09.2007 |
Conference Contribution: European Semiconductor Laser Workshop 2007, Berlin, Germany, Realization of a tunnel-junction for electrically-pumped GaSb-based vertical-cavity surface-emitting lasers for sensing applications, talk by A. Bachmann, O. Dier, C. La |
Research, Industry (electronics & opto devices) |
Europe |
n.a. |
WSI |
|
|
01.09.2007 |
Conference Contribution: Field Laser Applications in Industry and Research (FLAIR), Florence, Italy, Reconstruction of the Transmission from n-th harmonic Spectra, Poster by A.Hangauer, J. Chen, R. Strzoda, M.-C. Amann |
Research, Industry (electronics & opto devices) |
Europe |
n.a. |
SAG |
|
|
01.09.2007 |
Invited Journal paper: Mode and polarization control in VCSELs using shallow surface structures, J.S. Gustavsson, Å. Haglund, E. Söderberg, J. Vukusic, P. Modh, P. Jedrasik, and A. Larsson, IET Optoelectronics, vol.1, no.5, pp.197-205, 2007. |
Research, Industry (electronics & opto devices) |
World |
n.a. |
Chalmers |
|
|
01.09.2007 |
Conference Contribution: Field Laser Applications in Industry and Research (FLAIR), Florence, Italy, Recent developments and prospects of long-wavelength VCSELs for TDLS applications, talk by M. Ortsiefer, J. Rosskopf, R. Shau, C. Gréus, and E. Rönneberg |
Research, Industry (electronics & opto devices) |
Europe |
n.a. |
VERT |
|
|
01.09.2007 |
Project fact sheet: NEMIS - project summary, accessible through the project website |
General |
World |
n.a. |
all |
|
|
01.10.2007 |
Conference Contribution: Deutscher MBE-Workshop 2006, Hamburg, Germany, Reinigung von GaSb-Oberflächen mittels atomaren Wasserstoffes, Talk by O. Dier, C. Lauer, and M.-C. Amann |
Research, Industry (electronics & opto devices) |
Germany |
n.a. |
WSI |
|
|
13.10.2007 |
Open day: Nanoday LMU, Munich, Germany, Infrarotlaserdioden für Kommunikation und Gassensorik, Poster by T. Lim, A. Bachmann, O. Dier, K. Kashani-Shirazi, M.-C. Amann |
General public |
Germany |
WSI |
||
|
01.12.2007 |
Regular Article: Reduction of hetero-interface resistivity in n-type AlAsSb/GaSb distributed Bragg reflectors, O. Dier, C. Reindl, A. Bachmann, C. Lauer, T. Lim, K. Kashani-Shirazi, and M.-C. Amann, submitted and accepted by Semicond. Sci. Technol. |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
01.12.2007 |
Conference contribution: International Symposium on VCSELs and Integrated Photonics, Tokyo, Japan, Engineering the optical properties of VCSELs using surface structures, talk by A. Larsson |
Research, Industry (electronics & opto devices) |
World |
n.a. |
Chalmers |
|
|
06.12.2007 |
Conference contribution: MQW laser diode photoacoustic detection of formaldehyde in 2.3 mu m spectral range, talk by Cihelka et al, ICTON Mediterranean winter conference, Sousse, Tunisia |
scientific, students |
world |
100 |
IOP |
|
|
01.01.2008 |
Regular Article: Room-temperature, monolithic, electrically-pumped type-I quantum-well Sb-based VCSELs emitting at 2.3µm, L. Cerutti, A. Ducanchez, P. Grench, A. Garnache, F. Genty, Electronics letters Vol. 44 No. 3, 203-205, 2008 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
UM2 |
|
|
01.01.2008 |
Regular Article: Continuous wave operation of electrically pumped GaSb-based vertical-cavity surface-emitting laser at 2.3 µm, A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer and M.-C. Amann, Electronics letters Vol. 44 No. 3 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
19.01.2008 |
Regular Article: Modeling of the n-th harmonic spectra used in wavelength modulation spectroscopy and their properties, A. Hangauer, J. Chen, M.-C. Amann, Appl. Phys. B |
Research, Industry (electronics & opto devices) |
World |
SAG |
||
|
01.03.2008 |
Conference contribution: Accurate measurement of the wavelength modulation phase shift of tunable vertical cavity surface-emitting lasers (VCSELs), talk by A.Hangauer, J.Chen, R. Strzoda, and M.-C. Amann, SIOE conference 2008, Cardiff, Wales |
Research, Industry (electronics & opto devices) |
World |
n.a. |
SAG |
|
|
20.03.2008 |
Regular Article: RT Continuous Wave operation of electrically-injected Sb-based RC-LED emitting near 2.3 µm, A. Ducanchez, L. Cerutti, P. Grech and F. Genty, in Superlattices and Microstructures, 44, 62-69, 2008 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
UM2 |
|
|
31.03.2008 |
Conference Contribution: Dynamic Wavelength tuning behavior of Vertical-Cavity Surface-Emitting Lasers, J. Chen, A. Hangauer, R. Strzoda, M.-C. Amann, SIOE conference 2008, Cardiff, Wales |
Research, Industry (electronics & opto devices) |
World |
SAG, TUM |
||
|
04.04.2008 |
Open Days at UM2. Application of Sb-based VCSELs, poster by A. Ducanchez |
Research, Schools, Students, Public |
France |
100 |
UM2 |
|
|
15.04.2008 |
Magazine Article: GaSb VCSELs execute CW operation, Compound Semiconductor Magazine April 2008 Volume 14 Number 3 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
01.05.2008 |
Conference contribution: Room Temperature, Sb-based Monolithic EP-VCSEL at 2.3 µm including a Tunnel Junction, F. Genty et al., oral presentation, talk on CLEO Conference 2008, San Jose, California |
Research, Industry (electronics & opto devices) |
World |
200 |
UM2 |
|
|
01.05.2008 |
Conference contribution: Monolithic, Sb-based electrically-pumped VCSEL emitting at 2.3 µm, A. Ducanchez et al., poster on the IPRM 2008, Versailles, France |
Research, Industry (electronics & opto devices) |
World |
200 |
UM2 |
|
|
01.05.2008 |
Conference contribution: Square-Root Law Thermal Response in VCSELs: Experiment and Theoretical Model, talk by A.Hangauer, J. Chen and M.-C. Amann, CLEO Conference 2008, San Jose, California |
Research, Industry (electronics & opto devices) |
World |
200 |
SAG |
|
|
01.05.2008 |
Conference contribution: Electrically Pumped GaSb-based VCSEL with Buried Tunnel Junction, talk by A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer and M.-C. Amann, CLEO Conference 2008, San Jose, California |
Research, Industry (electronics & opto devices) |
World |
200 |
WSI |
|
|
01.05.2008 |
Conference contribution: Single-mode Continuous Wave Operation of Electrically Pumped 2.25 μm GaSb-based VCSEL, talk by A. Bachmann, K. Kashani-Shirazi, T. Lim, O. Dier, C. Lauer and M.-C. Amann, IPRM 2008, Versailles, France |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
08.05.2008 |
Conference contribution: Presentation of the NEMIS project and scientific results, F.Genty, K. Kashani, talk on the VCSEL day, Copenhagen, Denmark |
Research, Industry (electronics & opto devices) |
Europe |
20 |
All |
|
|
09.05.2008 |
Conference contribution: Recent Progress and Prospects on GaSb-based BTJ-VCSELs, talk by A. Bachmann, International Semiconductor Laser Workshop 2008, San Jose |
Research |
World |
30 |
WSI |
|
|
01.06.2008 |
Regular Article: "VCSEL-day offered a common platform for VCSEL and VECSEL-related EU-funded projects", K.Kashani, p. Gilet, Photonics newsletter Volume 2 Issue 2 |
Photonic related EC-funded projects |
EU |
n.a. |
WSI |
|
|
01.06.2008 |
Regular article: "Electrically pumped GaSb-based VCSELs emitting at 2.3 μm", K.Kashani, F. Genty, Photonics newsletter Volume 2 Issue 2 |
Photonic related EC-funded projects |
EU |
n.a. |
WSI, UM2 |
|
|
09.06.2008 |
Regular Article: Wavelength modulation spectroscopy with a widely tunable InP-based 2.3 µm vertical-cavity surface-emitting laser, A. Hangauer, J. Chen, R. Strzoda, M. Ortsiefer, M.-C. Amann, Optics Letters |
Research, Industry (electronics & opto devices) |
World |
SAG, VERT, TUM |
http://www.opticsinfobase.org/abstract.cfm?URI=ol-33-14-1566 |
|
|
01.07.2008 |
Regular Article: Fabrication and characterization of GaSb-based monolithic RC-LED emitting around 2.3 µm and including a Tunnel Junction, A. Ducanchez, L. Cerutti, A. Gassenq, P. Grech and F. Genty, in IEEE J. Select. Topics Quant. Electronics, 14(4),2008 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
UM2 |
http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=2944 |
|
01.07.2008 |
Regular Article: Simplified model of the dynamic thermal tuning behavior of Vertical-Cavity Surface-Emitting Lasers", J.Chen, A.Hangauer, M.-C. Amann, IEEE Photonics, 20 (3), 1082-1085, 2008 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
SAG |
|
|
10.07.2008 |
Seminar in UM2: 2nd year PhD results (CST) on development of new GaSb-based EP-VCSELs structures. A. Ducanchez |
Research, Students |
France |
50 |
UM2 |
|
|
15.07.2008 |
Magazine Article: VCSELs head farther into the infrared, Compound Semiconductor Magazine, July 2008, Volume 14 Number 6 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
01.08.2008 |
Conference contribution: Long wavelength GaSb-based VCSEL with BTJ technology, poster by K. Kashani, A. Bachmann, M.-C. Amann, BNNi iNow Workshop 2008, Tokyo, Japan |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
03.08.2008 |
Conference contribution: GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3µm) grown by MBE, L. Cerutti et al., invited talk on the 15th International Conference on MBE 2008, Vanouver, Canada |
Research, Industry |
World |
200 |
UM2 |
|
|
05.08.2008 |
Conference contribution: MBE Growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs, talk by K. Kashani, A. Bachmann, G. Boehm, M.-C. Amann, 15th International Conference on MBE 2008, Vanouver, Canada |
Research, Industry |
World |
n.a. |
WSI |
|
|
27.08.2008 |
VCSEL extends its reach to detect CO |
Semi-scientific audience |
World |
n.a. |
SAG |
|
|
01.09.2008 |
Conference contribution: GaSb-based Electrically Pumped VCSEL with Buried Tunnel Junction, A. Bachmann, K. Kashani, M.C. Amann, IEEE/LEOS ISLC 2008, Sorrento, Italy |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
http://www.ieee.org/organizations/society/leos/LEOSCONF/ISLC2008/index.html |
|
01.09.2008 |
Regular article: MBE Growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs, K. Kashani, A. Bachmann, G. Boehm, S. Ziegler, M.-C. Amann, Journal of chrystal growth |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
01.09.2008 |
Regular Article: "Room-Temperature Continuous-Wave Operation of 2.3 µm Sb-based Monolithic" by A. Ducanchez, L. Cerutti, P. Grech, and F. Genty, IEEE Photonics Technology Letters, Vol. 20, No. 17-20, pp 1745-1747 |
research, Industry (electronics & opto devices) |
World |
n.a. |
UM2 |
|
|
02.09.2008 |
Internship: UM2 Master 2, Internship: Electrical and thermal optimisation on Sb-based VCSELs, report and oral presentation by Henry Nguyen |
research, Students |
France |
n.a. |
UM2 |
|
|
02.09.2008 |
Conference contribution: Laser diode photoacoustic and FTIR laser spectroscopy of formaldehyde in the 2.3 mu m and 3.5 mu m spectral range, talk by Cihelka et al, 20th International Conference on High Resolution Molecular Spectroscopy, Prague, CZ |
scientific, students |
world |
100 |
IOP |
|
|
05.09.2008 |
Presentation at the NUSOD conference, Nottingham, UK: "Trends in cavity designs for vertical cavity lasers and simulation of their consequences", talk by Jörgen Bengtsson |
Specialists in numerical modeling of optoelectronic devices |
World |
100 |
Chalmers |
|
|
07.09.2008 |
Invited talk: GaSb-based VCSELs: NEMIS results, F. Genty, A. Bachmann et al., joint invited talk, MIOMD conference 2008, Freiburg, Germany |
Research, Industry (electronics & opto devices) |
World |
120 |
UM2, WSI |
|
|
07.09.2008 |
Conference contribution: Mid-Infrared Optical Response of Heavily Doped GaSb:Te, J. Humlíček, K. Navrátil, E Hulicius, J. Vyskočil, T. Šimeček, K. Kashani, M. Amann, poster, MIOMD conference 2008, Freiburg, Germany |
Research, Industry (electronics & opto devices) |
World |
120 |
IOP, WSI |
|
|
08.09.2008 |
Conference contribution: Mid-infrared photovoltaic detectors based on a type II p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb heterostructure with deep quantum wells at the interface D-IX, poster by M.P. Mikhailova et all , MIOMD conference 2008, Freiburg, Germany |
scientific, students |
world |
150 |
IOP |
|
|
14.09.2008 |
Conference contribution: GaSb-based Microcavity EP-VCSEL emitting above 2.2 µm in CW regime at RT, talk by A. Ducanchez, L.Cerutti, P. Grech and F. Genty, ISLC 2008, Sorrento, Italy |
Research, Industry (Opto devices) |
World |
200 |
UM2 |
http://www.ieee.org/organizations/society/leos/LEOSCONF/ISLC2008/index.html |
|
20.09.2008 |
Conference Contribution: CO and CH4 sensing with electrically pumped 2.3 µm GaSb-based VCSELs, talk by J. Chen, A. Hangauer, A. Bachmann, T. Lim, K. Kashani-Shirazi, R. Strzoda and M.-C. Amann, European Semiconductor Laser Workshop. Eindhoven, 2008 |
Research |
World |
50 |
SAG, WSI |
|
|
01.11.2008 |
Laser Diode Measures Carbon Monoxide Traces |
Non-scientific audience |
World |
n.a. |
SAG |
|
|
06.11.2008 |
Regular Article: GaSb-based monolithic EP-VCSEL emitting above 2.5 µm , Ducanchez A, Cerutti L, Grech P, et Genty F, Electronics Letters, Vol 44, No 23, 1457, 2008 |
Research, Industry (electronics & opto devices) |
World |
n.a. |
UM2 |
|
|
01.12.2008 |
Diffraction loss in long-wavelength buried tunnel junction VCSELs analyzed with a hybrid coupled-cavity transfer-matrix model, J. Bengtsson, J. Gustavsson, Å. Haglund, A. Larsson, A. Bachmann, K. Kashani-Shirazi, and M.-C. Amann, Opt. Expr. 16, 25, 2008 |
Research, Industry (Opto devices) |
World |
n.a. |
Chalm, WSI |
|
|
12.01.2009 |
Laserdiode misst winzige Spuren Kohlenmonoxid |
Non-scientific audience |
Germany |
n.a. |
SAG |
|
|
13.01.2009 |
Conference contribution: VCSEL Structures and Applications, talk by M.-C. Amann (invited), TuB2.1, IEEE Winter Topicals 2009, Innsbruck, Austria |
Scientific, students |
World |
100 |
WSI |
http://www.ieee.org/organizations/society/leos/LEOSCONF/WIN2009/ |
|
17.02.2009 |
Conference contribution: IR VCSELs for Sensing Applications, talk by M.-C. Amann, 39th Freiburg Infrared Colloquium, Freiburg, Germany |
Research, students |
World |
100 |
WSI |
|
|
26.02.2009 |
Regular article: Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm, Ducanchez A, Cerutti L, Grech P, Genty F, and Tournie E, Electronics Letters, Vol. 45, No. 5, pp 265-266, 2009 |
Research, Industry (electronics & Opto devices) |
World |
n.a. |
UM2 |
|
|
10.03.2009 |
Conference Contribution: Optimized MBE growth technique for GaSb-based edge emitters at 2.7 µm, talk by K. kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, M.-C. Amann, Euro MBE 2009, Zacopane |
Research, Industry (electronics & opto devices) |
World |
150 |
WSI |
|
|
15.03.2009 |
Regular Article: GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3µm) grown by MBE, L.Cerutti et al., Journal of crystal Growth. 311 (2009) 1912 |
Research, Industry (electronics and opto devices) |
World |
n.a. |
UM2 |
|
|
07.04.2009 |
Conference Contribution: Low-resistive ohmic contacts to n-InAs0.91Sb0.09 for GaSb-based VCSELs in the mid-infrared range, talk by S. Arafin, A. Bachmann, K. Kashani-Shirazi, S. Priyabadini, M.-C. Amann, SIOE Conf., Cardiff |
Research |
World |
100 |
WSI |
|
|
07.04.2009 |
Conference Contribution: Buried Tunnel junction Mid-infrared GaSb VCSELs investigated using hydrostatic pressure, talk by I. Marko, A. Ikyo, A. Adams S. Sweeney, A. Bachmann, K. Kashani-Shirazi, M.-C. Amann, SIOE Conf. 2009, Cardiff |
Research |
World |
150 |
WSI |
|
|
24.04.2009 |
Regular Article: GaSb-based VCSEL With Buried Tunnel Junction for Emission Around 2.3 µm, A. Bachmann, K. Kashani-Shirazi, S. Arafin, M.-C. Amann, J. Sel. Top. Quantum Electron. 15(3) |
Research, Industry (elevctronics & opto devices) |
World |
n.a. |
WSI |
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4840372&isnumber=5068462 |
|
24.04.2009 |
Conference Contribution: Presentation of the Nemis results in UM2 talk by L.Cerutti et al, on the VCSRL day, Göteborg, sweden |
Research and Industry (Electronics and opto devices) |
Europe |
50 |
UM2 |
|
|
12.05.2009 |
Award: Kaiser Friedrich Forschungspreis 2009 |
Research, Industry (electronics & opto devices), non-scientific audience |
Germany |
70 |
WSI |
|
|
17.05.2009 |
Conference contribution: Sb-based Mid-infrared lasers, Invited talk by E. Tournie et al. Workshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE) 2009, Malaga, Spain. |
Research, Industry (Electronics & opto devices) |
World |
150 |
UM2 |
|
|
02.06.2009 |
Regular Article: Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5 To 2.7 µm Wavelength Range, K. Kashani-Shirazi, K. Vizbaras, A. Bachmann, S. Arafin, M.-C. Amann, IEEE Photon. Technol. Lett. 21(16) |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5061880&isnumber=5173590 |
|
02.06.2009 |
Conference Contribution: Ultra-low threshold GaSb-based laser diodes at 2.65 µm, talk by K. Kashani-Shirazi, A. Bachmann, S. Arafin, K. Vizbaras, M.-C. Amann, CLEO 2009, Baltimore |
Research, Industry (electronics & opto devices) |
World |
150 |
WSI |
|
|
02.06.2009 |
Conference Contribution: Fire Detection with a Compact, 2.3 µm VCSEL-Based Carbon Monoxide Sensor by A. Hangauer, J. Chen, R. Strzoda, M. Fleischer and M.-C. Amann (CLEO) |
World |
World |
500 |
WSI SAG |
|
|
04.06.2009 |
Conference Contribution: Low-resistive thermally stable metal-semiconductor contacts on n-GaSb using n-InAsSb contact layer, talk by S. Priyabadini, S. Arafin, A. bachmann, K. Kashani-Shirazi, M.-C. Amann, Internat. Conf. on Frontiers of Physics, Kathmand |
Research |
World |
100 |
WSI |
|
|
05.06.2009 |
Conference Contribution: CO and CH4 Sensing with Single Mode 2.3µm GaSb-Based VCSEL by J. Chen, A. Hangauer, A. Bachmann, T. Lim, K. Kashani-Shirazi, R. Strzoda, and M.-C. Amann (CLEO) |
World |
World |
500 |
WSI SAG |
|
|
14.06.2009 |
Conference Contribution: GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm, talk by A.Ducanchez, et al., IEEE Conference on Laser and Electro-Optics 2009 (CLEO europe 2009), Munich, Germany |
Research, Industry (electronics & opto devices) |
World |
200 |
UM2 |
|
|
02.07.2009 |
Internship: UM2 Master 2, Improvement of electrical confinement in electrical Sb-based VCSELs, Report and Oral by Dorian Sanchez |
Research, Students |
France |
n.a. |
UM2 |
|
|
08.07.2009 |
Internship: UM2 PhD Thesis, Technological process for concption of MIR sb based electrically VCSELs, talk by A.Ducanchez |
Research, Students |
France |
n.a. |
UM2 |
|
|
14.07.2009 |
Conference Contribution: Long wavelength electrically pumped GaSb-based Buried Tunnel Junction VCSELs, talk by A. Bachmann, S. Arafin, K. Kashani-Shirazi, M.-C. Amann, 14th Internat. Conf. on Narrow Gap Semiconductors and Systems, Sendai |
Research |
World |
100 |
WSI |
|
|
06.08.2009 |
Conference Contribution: Tunable Near- and Mid-Infrared VCSELs for Sensing and Spectroscopy, talk by M.-C. Amann, ThA2, p. 39-40, 2009 International Nano-Optoelectronics Workshop, Stockholm, Sweden and Berlin, Germany |
Scientific, Students |
World |
200 |
WSI |
|
|
28.08.2009 |
Seminar in EPFL Lausanne, GaSb based electrically pumped VCSELs emitting in the mid-infrared wavelength range (2-3.5µm), talk by A. Ducanchez |
Research |
Europe |
50 |
UM2 |
|
|
08.09.2009 |
Long-wavelength VCSELs for TDLS applications |
Research, Industry |
World |
150 |
VERT |
|
|
08.09.2009 |
Conference Contribution: Miniaturized Laser Spectroscopic CO Sensor for Industrial and Safety Applications by J. Chen, A. Hangauer, R. Strzoda, M. Fleischer and M.-C. Amann (Eurosensors Lausanne) |
World |
World |
500 |
SAG WSI |
|
|
20.10.2009 |
Conference contribution: W-heterolasers verzus QCL, invited talk by E. Hulicius, p.44, Nanocon 1, Roznov pod Radhostem, Czech Republic |
Scientific, students |
Czech Republic |
50 |
IOP |
|
|
17.12.2009 |
Regular Article: "Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 µm", New J. Phys. 11 (2009) 125014 (invited). |
Research, Industry (electronics & opto devices) |
World |
n.a. |
WSI |
|
|
19.01.2010 |
Regular Article: Diagnostic and Characterization of the VCSEL Diode Based on GaSb, I. Matulkova, J. Cihelka, J. Vyskocil, Z. Zelinger, E. Hulicius, T. Simecek and S. Civis, submitted and accepted to Appl. Phys. B |
Research |
World |
n.a. |
IOP |